Features

‌· Small, lightweight packaging

  • · Standard power ranges: 600, 1250, 3000, 5000 Watts

  • · Standard fixed frequencies: 3.39 MHz to 30 MHz

  • · Patented S-Technology provides ultra-stable output 
  •    This stabilizing technology optimizes amplifier performance, 
  •    reducing power-gain changes caused by plasma impedance fluctuations

  • · Designed to meet ETL and SEMI F47 directives

  • · Forward or Delivered power mode regulation

‌Applications

The CB series is designed to meet the performance demand in RF-driven plasma systems for semiconductor processing. Applications include etch, ICP, RF sputtering and PECVD, as well as induction and dielectric heating processes in industrial systems, and solar photovoltaic applications.

Specifications

· Frequency: Any fixed frequency from 3.39 to 30 MHz

  • · Frequency stability: +/- 0.005%

  • · Line frequency: 50/60 Hz

  • · Analog power command: 0-10 VDC for 0 to maximum output

  • · Standard power accuracy: 2 % (higher accuracies available)

  • · Standard power linearity: 2% of setting at power levels above 10% 
  •   of rated power

  • · Power repeatability: +/- 1% of setpoint into a 50-Ohm load

  • · Control I/O connector: Standard: 15-pin subminiature D type 
  •   (female), Optional: 25-pin subminiature D type (female)

  • · Harmonic distortion: Less than -35 dBc

  • · Reflected power limit: 20% of full scale typical

Options

‌‌· 3.39 and 6.78 MHz options available, added package height required

  • ‌· High accuracy, low output control: +/- 1% of setpoint from 10-100% 
  •   rated power
  • ‌· Internal fixed match
  • ‌· Master/Slave operation
  • ‌· Frequency tuning
  • ‌· DeviceNet